块状碳化硅单晶的生产

Production of bulk single crystals of silicon carbide

Abstract

块状、低杂质碳化硅单晶在晶体生长界面上通过沉积含硅和含碳汽相物质生长出。硅源蒸汽由蒸发硅并输送硅蒸汽到晶体生长坩埚而提供。碳汽相物质由碳源蒸汽(例如,CN)提供或由硅源蒸汽从固相碳源上方或中间流过而得到,例如,硅蒸汽流经多孔的石墨或石墨颗粒层。
Bulk, low impurity silicon carbide single crystals are grown by deposition of vapor species containing silicon and vapor species containing carbon on a crystal growth interface. The silicon source vapor is provided by vaporizing liquid silicon and transporting the silicon vapor to a crystal growth crucible. The carbon vapor species are provided by either a carbon containing source gas (for example, CN) or by flowing the silicon source vapor over or through a solid carbon source, for example flowing the silicon vapor through porous graphite or a bed of graphite particles.

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    CN-101896647-BFebruary 13, 2013新日本制铁株式会社Silicon carbide single crystal ingot, and substrate and epitaxial wafer obtained from the silicon carbide single crystal ingot