Method and device for manufacturing semiconductor thin film, beam shaping mask, and thin film transistor

半导体薄膜制造方法及装置、光束成形掩模及薄膜晶体管

Abstract

本发明提供了一种半导体薄膜的制造方法,其能够减少半导体薄膜中的晶粒边界的数量并还能够控制晶粒边界的方向。如图6(1)中所示,当第一光束辐射到非晶硅上时,放射状地形成具有位于中心的凹形的顶端的温度梯度。从而,如图6(2)中所示,在凹形顶端中形成不仅是在光束宽度方向上而且是在光束长度方向上生长的晶粒。在第二光束等之后,利用在凹形顶端中所形成的晶粒作为籽晶重复生长。结果,与常规窄线光束的情况相比,用位于起点的凹形的顶端形成有更宽宽度的条状晶粒。此外,通过设定凹形图案的周期在垂直于光束扫描方向的方向上等于或小于晶粒直径,能够形成连续成直线排列的条状晶粒。
A manufacturing method of a semiconductor thin film decreases the number of and controls the direction of crystal grain boundaries. A first beam irradiated onto amorphous silicon produces a radial temperature gradient centered on a tip of a concave. This forms a crystal grain in the concave tip, which grows in both the beam width and length direction. After the second beam and on, growth is repeated using the crystal grain formed in the tip of the concave as the seed. This forms a band-form crystal grain with a wider than that of the conventional narrow-line beam, with the tip of the concave being the start point. Further, by setting the periphery of the concave pattern to be equal or less than the crystal grain diameter in the direction vertical to the beam scanning direction, it is possible to form the band-form crystal grain being lined continuously.

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